Abstract
The application of Kelvin probe force microscopy (KPFM) in ultra high vacuum (UHV) allows to determine the absolute work function of surfaces with a very high energy ( < 5 meV) and lateral ( < 20 nm) resolution. We present measurements on different UHV cleaved III-V compound semiconductors. The (110)-surface shows work function variations due to defect states at step edges. We observed band bending on the (110)-surface of GaAs from surface photovoltage measurements. Finally, we discuss the influence of the previous effects on KPFM measurement of a UHV cleaved GaP pn-homojunction. Due to the long range nature of the electrostatic forces the geometry of the tip, cantilever and sample plays an important role in KPFM.
Original language | English |
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Pages (from-to) | 138-142 |
Number of pages | 5 |
Journal | Materials Science and Engineering: B |
Volume | 102 |
Issue number | 1-3 |
DOIs | |
State | Published - 15 Sep 2003 |
Externally published | Yes |
Event | E-MRS 2002 Symposium E - Strasbourg, France Duration: 18 Jun 2002 → 21 Jun 2002 |
Keywords
- Gallium arsenide
- Gallium phosphide
- Kelvin probe force microscopy
- Surface defects
- Surface photovoltage
- Work function
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering