Kelvin probe force microscopy on III-V semiconductors: The effect of surface defects on the local work function

Th Glatzel, S. Sadewasser, R. Shikler, Y. Rosenwaks, M. Ch Lux-Steiner

Research output: Contribution to journalConference articlepeer-review

62 Scopus citations

Abstract

The application of Kelvin probe force microscopy (KPFM) in ultra high vacuum (UHV) allows to determine the absolute work function of surfaces with a very high energy ( < 5 meV) and lateral ( < 20 nm) resolution. We present measurements on different UHV cleaved III-V compound semiconductors. The (110)-surface shows work function variations due to defect states at step edges. We observed band bending on the (110)-surface of GaAs from surface photovoltage measurements. Finally, we discuss the influence of the previous effects on KPFM measurement of a UHV cleaved GaP pn-homojunction. Due to the long range nature of the electrostatic forces the geometry of the tip, cantilever and sample plays an important role in KPFM.

Original languageEnglish
Pages (from-to)138-142
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume102
Issue number1-3
DOIs
StatePublished - 15 Sep 2003
Externally publishedYes
EventE-MRS 2002 Symposium E - Strasbourg, France
Duration: 18 Jun 200221 Jun 2002

Keywords

  • Gallium arsenide
  • Gallium phosphide
  • Kelvin probe force microscopy
  • Surface defects
  • Surface photovoltage
  • Work function

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