Kinetic model for photoinduced and thermally induced creation and annihilation of metastable defects in hydrogenated amorphous silicon

I. Abdulhalim

doi:10.1063/1.358820

Kinetic model for photoinduced and thermally induced creation and annihilation of metastable defects in hydrogenated amorphous silicon

I. Abdulhalim

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A microscopic many-body model is proposed for the kinetics of metastable defects (MSDs) in hydrogenated amorphous silicon (a-Si:H). It is based on the existence of short-lived large energy fluctuations which induce transient traps for carriers that release their energy and enhance the creation or annihilation of MSDs. The expressions found for the photoinduced and thermally induced creation and annihilation rates' coefficients explain the dependence on the variety of parameters.

Original language	English
Pages (from-to)	1897-1901
Number of pages	5
Journal	Journal of Applied Physics
Volume	77
Issue number	5
DOIs	https://doi.org/10.1063/1.358820
State	Published - 1 Mar 1995
Externally published	Yes

Keywords

Solar cells

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.358820

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title = "Kinetic model for photoinduced and thermally induced creation and annihilation of metastable defects in hydrogenated amorphous silicon",

abstract = "A microscopic many-body model is proposed for the kinetics of metastable defects (MSDs) in hydrogenated amorphous silicon (a-Si:H). It is based on the existence of short-lived large energy fluctuations which induce transient traps for carriers that release their energy and enhance the creation or annihilation of MSDs. The expressions found for the photoinduced and thermally induced creation and annihilation rates' coefficients explain the dependence on the variety of parameters.",

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author = "I. Abdulhalim",

year = "1995",

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AU - Abdulhalim, I.

PY - 1995/3/1

Y1 - 1995/3/1

N2 - A microscopic many-body model is proposed for the kinetics of metastable defects (MSDs) in hydrogenated amorphous silicon (a-Si:H). It is based on the existence of short-lived large energy fluctuations which induce transient traps for carriers that release their energy and enhance the creation or annihilation of MSDs. The expressions found for the photoinduced and thermally induced creation and annihilation rates' coefficients explain the dependence on the variety of parameters.

AB - A microscopic many-body model is proposed for the kinetics of metastable defects (MSDs) in hydrogenated amorphous silicon (a-Si:H). It is based on the existence of short-lived large energy fluctuations which induce transient traps for carriers that release their energy and enhance the creation or annihilation of MSDs. The expressions found for the photoinduced and thermally induced creation and annihilation rates' coefficients explain the dependence on the variety of parameters.

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=36449008056&partnerID=8YFLogxK

U2 - 10.1063/1.358820

DO - 10.1063/1.358820

M3 - Article

AN - SCOPUS:36449008056

SN - 0021-8979

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EP - 1901

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Kinetic model for photoinduced and thermally induced creation and annihilation of metastable defects in hydrogenated amorphous silicon

Abstract

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