Kinetic simulations of optical absorption in LiF:Mg,Ti (TLD-100) following irradiation by ¹³⁷Cs gamma rays and bleaching at photon energies of 3.1 eV, 4.0 eV and 5.08 eV

The kinetic simulation of optical absorption (OA) dose response of LiF:Mg,Ti (TLD-100) following ¹³⁷Cs gamma irradiation and the effect of bleaching at photon energies of 3.1 eV, 4 eV and 5.08 eV on the OA energy spectrum is discussed. The simulations are limited to charge carrier migration in the conduction band and the valence bands leading to electron/hole capture in the various electron and hole trapping centers. An exhaustive search for identical values of the parameters of the model which result in agreement with certain combinations of the sets of experimental data has proven difficult. The reasons most susceptible to further investigation are, in the opinion of the authors, the incorporation of localized capture and recombination in the kinetic simulations which take place in multi-defect and spatially correlated complexes in parallel with the participation of delocalized charge carrier migration in the conduction and valence bands. Other possibilities, however, cannot currently be ruled out and should also be the subject of future investigations.