Kinetic study of H-terminated silicon nanowires oxidation in very first stages

Muhammad Y. Bashouti, Kasra Sardashti, Jürgen Ristein, Silke Christiansen

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Oxidation of silicon nanowires (Si NWs) is an undesirable phenomenon that has a detrimental effect on their electronic properties. To prevent oxidation of Si NWs, a deeper understanding of the oxidation reaction kinetics is necessary. In the current work, we study the oxidation kinetics of hydrogen-terminated Si NWs (H-Si NWs) as the starting surfaces for molecular functionalization of Si surfaces. H-Si NWs of 85-nm average diameter were annealed at various temperatures from 50°C to 400°C, in short-time spans ranging from 5 to 60 min. At high temperatures (T ≥ 200°C), oxidation was found to be dominated by the oxide growth site formation (made up of silicon suboxides) and subsequent silicon oxide self-limitation. Si-Si backbond oxidation and Si-H surface bond propagation dominated the process at lower temperatures (T < 200°C).

Original languageEnglish
Article number41
Pages (from-to)1-5
Number of pages5
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 1 Jan 2013
Externally publishedYes

Keywords

  • Activation energy
  • Kinetics
  • Oxidation
  • Silicon nanowires

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