Kondo shuttling in a nanoelectromechanical single-electron transistor

M. N. Kiselev, K. Kikoin, R. I. Shekhter, V. M. Vinokur

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23 Scopus citations

Abstract

We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in a nanoelectromechanical single-electron transistor. It is shown that the mechanical motion of the central island (a small metallic particle) with the spin results in a time-dependent tunneling width Γ (t) which leads to an effective increase of the Kondo temperature. The time-dependent oscillating Kondo temperature TK (t) changes the scaling behavior of the differential conductance, resulting in the suppression of transport in a strong-coupling and its enhancement in a weak-coupling regime. The conditions for fine-tuning of the Abrikosov-Suhl resonance and possible experimental realization of the Kondo shuttling are discussed.

Original languageEnglish
Article number233403
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number23
DOIs
StatePublished - 20 Dec 2006

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