Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation

X. Zhang, P. D. Dapkus, D. H. Rich

Research output: Contribution to journalArticlepeer-review

54 Scopus citations


We demonstrate the effects of NH3 flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved.

Original languageEnglish
Pages (from-to)1496-1498
Number of pages3
JournalApplied Physics Letters
Issue number10
StatePublished - 4 Sep 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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