Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation

X. Zhang; P. D. Dapkus; D. H. Rich

doi:10.1063/1.1308055

Lateral epitaxy overgrowth of GaN with NH₃ flow rate modulation

X. Zhang, P. D. Dapkus, D. H. Rich

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We demonstrate the effects of NH₃ flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved.

Original language	English
Pages (from-to)	1496-1498
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	10
DOIs	https://doi.org/10.1063/1.1308055
State	Published - 4 Sep 2000
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1308055

Cite this

@article{918a55710f354734a4828159ee2f07ae,

title = "Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation",

abstract = "We demonstrate the effects of NH3 flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved.",

author = "X. Zhang and Dapkus, {P. D.} and Rich, {D. H.}",

year = "2000",

month = sep,

day = "4",

doi = "10.1063/1.1308055",

language = "English",

volume = "77",

pages = "1496--1498",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation

AU - Zhang, X.

AU - Dapkus, P. D.

AU - Rich, D. H.

PY - 2000/9/4

Y1 - 2000/9/4

N2 - We demonstrate the effects of NH3 flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved.

AB - We demonstrate the effects of NH3 flow modulation on the lateral growth rate and morphology of GaN stripes employing lateral epitaxial overgrowth (LEO) by metalorganic chemical vapor deposition. The self-limiting growth mechanism, enhanced Ga diffusion on the (0001) plane, and Ga lateral supply are used to explain our observations. A lateral overgrowth rate to a vertical growth rate ratio of 2.1 and fully coalesced LEO GaN stripes after 1 h growth have been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0000674499&partnerID=8YFLogxK

U2 - 10.1063/1.1308055

DO - 10.1063/1.1308055

M3 - Article

AN - SCOPUS:0000674499

VL - 77

SP - 1496

EP - 1498

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -

Lateral epitaxy overgrowth of GaN with NH₃ flow rate modulation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this