Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)

Tzvi Templeman, Maayan Perez, Ofir Friedman, Ran Eitan Abutbul, Michael Shandalov, Vladimir Ezersky, Oleg Konovalov, Yuval Golan

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We report layer-by-layer growth of single crystal PbS films with unprecedented quality using chemical solution deposition, on par with much more sophisticated growth techniques. Ex situ transmission electron microscopy and in-house X-ray diffraction established the monocrystalline nature of the films and the atomically smooth film surface. High brilliance synchrotron X-rays were employed in grazing incidence geometry for in situ monitoring the formation of a gallium sulfide interfacial layer, and for establishing layer-by-layer growth of the subsequent PbS film. Our findings show that by maintaining a large reservoir of free sulfide ions, layer-by-layer growth is maintained by reducing the interfacial surface free energy.

Original languageEnglish
Pages (from-to)1538-1544
Number of pages7
JournalMaterials Chemistry Frontiers
Volume3
Issue number8
DOIs
StatePublished - 1 Aug 2019

ASJC Scopus subject areas

  • Materials Science (all)
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Layer-by-layer growth in solution deposition of monocrystalline lead sulfide thin films on GaAs(111)'. Together they form a unique fingerprint.

Cite this