Light induced structural changes in amorphous semiconductors

I. Abdulhalim; R. Beserman; Yu L. Khait

doi:10.1016/0022-3093(87)90091-3

Light induced structural changes in amorphous semiconductors

I. Abdulhalim, R. Beserman, Yu L. Khait

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Quasi-periodic oscillations in the transmittance and in the Raman Scattering spectra of several amorphous materials has been observed as a function of exposure time when irradiated by relatively low intensity CW laser beams. These oscillations are due to structural transformations between metastable states through the time evolution of the material structure from the metastable amorphous state towards more ordered states and finally to the crystalline state. The quasiperiod and its dependence on the photon energy and laser power are explained within the framework of a kinetic many body model used recently to explain the recrystallization of a-Si.

Original language	English
Pages (from-to)	387-390
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	97-98
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(87)90091-3
State	Published - 2 Dec 1987
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(87)90091-3

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title = "Light induced structural changes in amorphous semiconductors",

abstract = "Quasi-periodic oscillations in the transmittance and in the Raman Scattering spectra of several amorphous materials has been observed as a function of exposure time when irradiated by relatively low intensity CW laser beams. These oscillations are due to structural transformations between metastable states through the time evolution of the material structure from the metastable amorphous state towards more ordered states and finally to the crystalline state. The quasiperiod and its dependence on the photon energy and laser power are explained within the framework of a kinetic many body model used recently to explain the recrystallization of a-Si.",

author = "I. Abdulhalim and R. Beserman and Khait, {Yu L.}",

note = "Funding Information: ACKNOWLEDGEMENT The partial support of the Israel national councelo f Developmenits gratefullya cknowledged.O ne of us (I.A.) thank the Wolf foundationf or the financial support.",

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doi = "10.1016/0022-3093(87)90091-3",

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T1 - Light induced structural changes in amorphous semiconductors

AU - Abdulhalim, I.

AU - Beserman, R.

AU - Khait, Yu L.

N1 - Funding Information: ACKNOWLEDGEMENT The partial support of the Israel national councelo f Developmenits gratefullya cknowledged.O ne of us (I.A.) thank the Wolf foundationf or the financial support.

PY - 1987/12/2

Y1 - 1987/12/2

N2 - Quasi-periodic oscillations in the transmittance and in the Raman Scattering spectra of several amorphous materials has been observed as a function of exposure time when irradiated by relatively low intensity CW laser beams. These oscillations are due to structural transformations between metastable states through the time evolution of the material structure from the metastable amorphous state towards more ordered states and finally to the crystalline state. The quasiperiod and its dependence on the photon energy and laser power are explained within the framework of a kinetic many body model used recently to explain the recrystallization of a-Si.

AB - Quasi-periodic oscillations in the transmittance and in the Raman Scattering spectra of several amorphous materials has been observed as a function of exposure time when irradiated by relatively low intensity CW laser beams. These oscillations are due to structural transformations between metastable states through the time evolution of the material structure from the metastable amorphous state towards more ordered states and finally to the crystalline state. The quasiperiod and its dependence on the photon energy and laser power are explained within the framework of a kinetic many body model used recently to explain the recrystallization of a-Si.

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M3 - Article

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VL - 97-98

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Light induced structural changes in amorphous semiconductors

Abstract

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