Skip to main navigation
Skip to search
Skip to main content
Ben-Gurion University Research Portal Home
Help & FAQ
Home
Profiles
Research output
Research units
Prizes
Press/Media
Student theses
Activities
Research Labs / Equipment
Datasets
Projects
Search by expertise, name or affiliation
Limits of funneling efficiency in non-uniformly strained 2D semiconductors
Moshe G. Harats
, Kirill I. Bolotin
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Limits of funneling efficiency in non-uniformly strained 2D semiconductors'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
2D Semiconductors
100%
Exciton
100%
Room Temperature
100%
Transition Metal Dichalcogenides
100%
Low Temperature
66%
Exciton Lifetime
66%
High Density
33%
Photogenerated Electron-hole Pairs
33%
Illumination Source
33%
High Strain
33%
Thermal Equilibrium
33%
Sharp Tip
33%
Device Geometry
33%
Effective Force
33%
Exciton Transport
33%
Auger Recombination
33%
Correlated States
33%
Excitation Density
33%
Photoconversion Efficiency
33%
Exciton Funneling
33%
Monolayer TMDCs
33%
Transition Metal Dichalcogenide Heterostructures
33%
Engineering
Transition Metal Dichalcogenide
100%
Room Temperature
75%
Low-Temperature
50%
Monolayer
25%
Heterostructures
25%
Thermal Equilibrium
25%
Hole Pair
25%
Auger Recombination
25%
Chemistry
Exciton
100%
Transition Element
50%
Ambient Reaction Temperature
25%
Monolayer
12%
Illumination
12%
Electron-Hole Pair
12%
Auger Recombination
12%
Material Science
Transition Metal Dichalcogenide
100%
Density
40%
Monolayers
20%
Heterojunction
20%