Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires

D. H. Rich; Y. Tang; H. T. Lin

doi:10.1063/1.365243

Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)₂/(GaP)₂ quantum wires

D. H. Rich, Y. Tang, H. T. Lin

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Abstract

The optical properties of (InP)₂/(GaP)₂ bilayer superlattice (BSL) structures have been examined with linearly polarized cathodoluminescence (CL), time-resolved CL spectroscopy, and cathodoluminescence wavelength imaging. An In and Ga composition modulation of ∼18% forms during the metalorganic chemical vapor deposition growth of short period (InP)₂/(GaP)₂ bilayer superlattices. Transmission electron microscopy showed a period of ∼800 Å along the [110] direction, resulting in coherently strained quantum wires. A strong excitation dependence of the polarization anisotropy and energy of excitonic luminescence from the quantum wires was found. The results are consistent with a phase-space and band filling model that is based on a k·p and two dimensional quantum confinement calculation which takes the coherency strain into account. CL images reveal that defects in the BSL originate from the GaAs substrate and/or the initial stages of InGaP growth. The effects of defects on the band filling, carrier relaxation kinetics, and nonlinear optical properties were examined.

Original language	English
Pages (from-to)	6837-6852
Number of pages	16
Journal	Journal of Applied Physics
Volume	81
Issue number	10
DOIs	https://doi.org/10.1063/1.365243
State	Published - 15 May 1997
Externally published	Yes

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General Physics and Astronomy

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@article{07958f536f8148378fcd681fa535ad06,

title = "Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires",

abstract = "The optical properties of (InP)2/(GaP)2 bilayer superlattice (BSL) structures have been examined with linearly polarized cathodoluminescence (CL), time-resolved CL spectroscopy, and cathodoluminescence wavelength imaging. An In and Ga composition modulation of ∼18% forms during the metalorganic chemical vapor deposition growth of short period (InP)2/(GaP)2 bilayer superlattices. Transmission electron microscopy showed a period of ∼800 {\AA} along the [110] direction, resulting in coherently strained quantum wires. A strong excitation dependence of the polarization anisotropy and energy of excitonic luminescence from the quantum wires was found. The results are consistent with a phase-space and band filling model that is based on a k·p and two dimensional quantum confinement calculation which takes the coherency strain into account. CL images reveal that defects in the BSL originate from the GaAs substrate and/or the initial stages of InGaP growth. The effects of defects on the band filling, carrier relaxation kinetics, and nonlinear optical properties were examined.",

author = "Rich, {D. H.} and Y. Tang and Lin, {H. T.}",

year = "1997",

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T1 - Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires

AU - Rich, D. H.

AU - Tang, Y.

AU - Lin, H. T.

PY - 1997/5/15

Y1 - 1997/5/15

N2 - The optical properties of (InP)2/(GaP)2 bilayer superlattice (BSL) structures have been examined with linearly polarized cathodoluminescence (CL), time-resolved CL spectroscopy, and cathodoluminescence wavelength imaging. An In and Ga composition modulation of ∼18% forms during the metalorganic chemical vapor deposition growth of short period (InP)2/(GaP)2 bilayer superlattices. Transmission electron microscopy showed a period of ∼800 Å along the [110] direction, resulting in coherently strained quantum wires. A strong excitation dependence of the polarization anisotropy and energy of excitonic luminescence from the quantum wires was found. The results are consistent with a phase-space and band filling model that is based on a k·p and two dimensional quantum confinement calculation which takes the coherency strain into account. CL images reveal that defects in the BSL originate from the GaAs substrate and/or the initial stages of InGaP growth. The effects of defects on the band filling, carrier relaxation kinetics, and nonlinear optical properties were examined.

AB - The optical properties of (InP)2/(GaP)2 bilayer superlattice (BSL) structures have been examined with linearly polarized cathodoluminescence (CL), time-resolved CL spectroscopy, and cathodoluminescence wavelength imaging. An In and Ga composition modulation of ∼18% forms during the metalorganic chemical vapor deposition growth of short period (InP)2/(GaP)2 bilayer superlattices. Transmission electron microscopy showed a period of ∼800 Å along the [110] direction, resulting in coherently strained quantum wires. A strong excitation dependence of the polarization anisotropy and energy of excitonic luminescence from the quantum wires was found. The results are consistent with a phase-space and band filling model that is based on a k·p and two dimensional quantum confinement calculation which takes the coherency strain into account. CL images reveal that defects in the BSL originate from the GaAs substrate and/or the initial stages of InGaP growth. The effects of defects on the band filling, carrier relaxation kinetics, and nonlinear optical properties were examined.

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Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)₂/(GaP)₂ quantum wires

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