Live Demonstration: An 800 Mhz Gain-Cell Embedded DRAM in 28 nm CMOS Bulk Process for Approximate Computing Applications

Robert Giterman, Roman Golman, Amir Shalom, Or Maltabashi, Alexanderr Fish, Adam Teman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Gain-cell embedded DRAM (GC-eDRAM) is an attractive alternative to traditional SRAM, due to its high-density, low-leakage, and inherent 2-ported operation, yet, its dynamic nature leads to limited retention time that requires periodic, power-hungry refresh cycles. However, the emerging approximate computing paradigm utilizes the inherent error resilience of some applications to tolerate data errors. Such error tolerance can be exploited by reducing the refresh rate in GC-eDRAM to achieve a substantial decrease in power consumption, at the cost of an increase in cell failure probability. In this demonstration, we present the first fabricated and fully functional GC-eDRAM in a 28 nm bulk CMOS technology. The array, which is based on a novel mixed-VT 4T bitcell, can be used in both traditional and for approximate computing applications, featuring a small silicon footprint and supporting high-performance operation. Silicon measurements demonstrate successful operation at 800 Mhz under a 900 mV supply, while retaining almost 30% lower area than a single-ported 6T SRAM in the same technology.

Original languageEnglish
Title of host publication2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538648810
DOIs
StatePublished - 26 Apr 2018
Externally publishedYes
Event2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018 - Florence, Italy
Duration: 27 May 201830 May 2018

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2018-May
ISSN (Print)0271-4310

Conference

Conference2018 IEEE International Symposium on Circuits and Systems, ISCAS 2018
Country/TerritoryItaly
CityFlorence
Period27/05/1830/05/18

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