Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials

Eugene Kogan; Mark Auslender; Moshe Kaveh

doi:10.1016/S1386-9477(00)00231-9

Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials

Eugene Kogan, Mark Auslender, Moshe Kaveh

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Localization and dephasing of conduction electrons in a low-carrier-density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the `mobility edge', which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the `mobility edge' crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.

Original language	English
Pages (from-to)	374-379
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	9
Issue number	3
DOIs	https://doi.org/10.1016/S1386-9477(00)00231-9
State	Published - 1 Jan 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(00)00231-9

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title = "Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials",

abstract = "Localization and dephasing of conduction electrons in a low-carrier-density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the `mobility edge', which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the `mobility edge' crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.",

author = "Eugene Kogan and Mark Auslender and Moshe Kaveh",

note = "Funding Information: This research was supported by The Israel Science Foundation founded by The Israel Academy of Sciences and Humanities. ",

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T1 - Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials

AU - Kogan, Eugene

AU - Auslender, Mark

AU - Kaveh, Moshe

N1 - Funding Information: This research was supported by The Israel Science Foundation founded by The Israel Academy of Sciences and Humanities.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Localization and dephasing of conduction electrons in a low-carrier-density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the `mobility edge', which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the `mobility edge' crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.

AB - Localization and dephasing of conduction electrons in a low-carrier-density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the `mobility edge', which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the `mobility edge' crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.

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U2 - 10.1016/S1386-9477(00)00231-9

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JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3

ER -

Localization and dephasing driven by magnetic fluctuations in colossal magnetoresistance materials

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