Localization and dephasing driven by magnetic fluctuations in low carrier density colossal magnetoresistance materials

E. Kogan, M. Auslender, M. Kaveh

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the "mobility edge , which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the "mobility edge" crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.

Original languageEnglish
Pages (from-to)373-376
Number of pages4
JournalEuropean Physical Journal B
Volume9
Issue number3
DOIs
StatePublished - 1 Jun 1999

Keywords

  • 72.10.-d Theory of electronic transport; scattering mechanisms
  • 72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
  • 75.50.Pp Magnetic semiconductors
  • 75.70.Pa Giant magnetoresistance

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