Long Wavelength Bulk Absorption Cutoffs in GaAs Light-Emitting Diodes Exhibiting Vacuum and Gamma-Irradiation Emission Wavelength Tunability

Shlomo Hava; N. S. Kopeika

doi:10.1109/T-ED.1986.22470

Long Wavelength Bulk Absorption Cutoffs in GaAs Light-Emitting Diodes Exhibiting Vacuum and Gamma-Irradiation Emission Wavelength Tunability

Shlomo Hava, N. S. Kopeika

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Absorption edge measurements indicate hardly any change in long wavelength detection cutoff of GaAs shallow-junction surface-emitting LED's as a result of pressure effects. This supports the concept that vacuum-induced significant emission wavelength tuning of these devices is a result of surface effects rather than changes in E_g. Also, possible slight decrease of long wavelength cutoff in these devices via gamma irradiaiton, while emission wavelength is shifted significantly to longer wavelengths, proves that y-irradiation spectral tuning of them does not derive from bulk bandgap changes and supports the concept that emission wavelength increase in these shallow-junction devices is a result of effects of y-irradiation on surface emission rather than on E_gin the bulk.

Original language	English
Pages (from-to)	224-226
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	33
Issue number	2
DOIs	https://doi.org/10.1109/T-ED.1986.22470
State	Published - 1 Jan 1986

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1986.22470

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abstract = "Absorption edge measurements indicate hardly any change in long wavelength detection cutoff of GaAs shallow-junction surface-emitting LED's as a result of pressure effects. This supports the concept that vacuum-induced significant emission wavelength tuning of these devices is a result of surface effects rather than changes in Eg. Also, possible slight decrease of long wavelength cutoff in these devices via gamma irradiaiton, while emission wavelength is shifted significantly to longer wavelengths, proves that y-irradiation spectral tuning of them does not derive from bulk bandgap changes and supports the concept that emission wavelength increase in these shallow-junction devices is a result of effects of y-irradiation on surface emission rather than on Egin the bulk.",

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AB - Absorption edge measurements indicate hardly any change in long wavelength detection cutoff of GaAs shallow-junction surface-emitting LED's as a result of pressure effects. This supports the concept that vacuum-induced significant emission wavelength tuning of these devices is a result of surface effects rather than changes in Eg. Also, possible slight decrease of long wavelength cutoff in these devices via gamma irradiaiton, while emission wavelength is shifted significantly to longer wavelengths, proves that y-irradiation spectral tuning of them does not derive from bulk bandgap changes and supports the concept that emission wavelength increase in these shallow-junction devices is a result of effects of y-irradiation on surface emission rather than on Egin the bulk.

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Long Wavelength Bulk Absorption Cutoffs in GaAs Light-Emitting Diodes Exhibiting Vacuum and Gamma-Irradiation Emission Wavelength Tunability

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