Longitudinal Nernst‐Ettingshausen Effect in Heavily Doped EuO

M. I. Auslender, V. V. Karyagin, A. B. Zolotovitskii, V. P. Kalashnikov, B. A. Gizhevskii

Research output: Contribution to journalArticlepeer-review


Temperature and magnetic field dependences of the Nernst‐Ettingshausen effect in heavily doped ferromagnetic semiconductors over a wide temperature interval embracing the Curie point are calculated numerically for the material parameters of Eu0.99Gd0.01O. It is assumed that usual Born scattering of current carriers by spin fluctuations dominates. The results obtained agree semiquantitatively with the experimental data.

Original languageEnglish
Pages (from-to)737-741
Number of pages5
Journalphysica status solidi (b)
Issue number2
StatePublished - 1 Jan 1984
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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