Temperature and magnetic field dependences of the Nernst‐Ettingshausen effect in heavily doped ferromagnetic semiconductors over a wide temperature interval embracing the Curie point are calculated numerically for the material parameters of Eu0.99Gd0.01O. It is assumed that usual Born scattering of current carriers by spin fluctuations dominates. The results obtained agree semiquantitatively with the experimental data.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics