Longitudinal Nernst‐Ettingshausen Effect in Heavily Doped EuO

M. I. Auslender; V. V. Karyagin; A. B. Zolotovitskii; V. P. Kalashnikov; B. A. Gizhevskii

doi:10.1002/pssb.2221210232

Longitudinal Nernst‐Ettingshausen Effect in Heavily Doped EuO

M. I. Auslender, V. V. Karyagin, A. B. Zolotovitskii, V. P. Kalashnikov, B. A. Gizhevskii

Research output: Contribution to journal › Article › peer-review

Abstract

Temperature and magnetic field dependences of the Nernst‐Ettingshausen effect in heavily doped ferromagnetic semiconductors over a wide temperature interval embracing the Curie point are calculated numerically for the material parameters of Eu_0.99Gd_0.01O. It is assumed that usual Born scattering of current carriers by spin fluctuations dominates. The results obtained agree semiquantitatively with the experimental data.

Original language	English
Pages (from-to)	737-741
Number of pages	5
Journal	physica status solidi (b)
Volume	121
Issue number	2
DOIs	https://doi.org/10.1002/pssb.2221210232
State	Published - 1 Jan 1984
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "Temperature and magnetic field dependences of the Nernst‐Ettingshausen effect in heavily doped ferromagnetic semiconductors over a wide temperature interval embracing the Curie point are calculated numerically for the material parameters of Eu0.99Gd0.01O. It is assumed that usual Born scattering of current carriers by spin fluctuations dominates. The results obtained agree semiquantitatively with the experimental data.",

author = "Auslender, {M. I.} and Karyagin, {V. V.} and Zolotovitskii, {A. B.} and Kalashnikov, {V. P.} and Gizhevskii, {B. A.}",

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AU - Auslender, M. I.

AU - Karyagin, V. V.

AU - Zolotovitskii, A. B.

AU - Kalashnikov, V. P.

AU - Gizhevskii, B. A.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - Temperature and magnetic field dependences of the Nernst‐Ettingshausen effect in heavily doped ferromagnetic semiconductors over a wide temperature interval embracing the Curie point are calculated numerically for the material parameters of Eu0.99Gd0.01O. It is assumed that usual Born scattering of current carriers by spin fluctuations dominates. The results obtained agree semiquantitatively with the experimental data.

AB - Temperature and magnetic field dependences of the Nernst‐Ettingshausen effect in heavily doped ferromagnetic semiconductors over a wide temperature interval embracing the Curie point are calculated numerically for the material parameters of Eu0.99Gd0.01O. It is assumed that usual Born scattering of current carriers by spin fluctuations dominates. The results obtained agree semiquantitatively with the experimental data.

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Longitudinal Nernst‐Ettingshausen Effect in Heavily Doped EuO

Abstract

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