Low-Cost Solution-Processed Facile h-MoO₃/n-Si Heterojunction Diode

In beginning of 21st century, it started witnessing the growth and widespread of 1D nanorod transition metal oxides for solid states & optoelectronic devices. These transition metal oxides with doped silicon offer an excellent heterojunction property with peculiar electrical and optical properties. Owing to such peculiarities, this article investigated the electrical behavior of n-Si and chemically synthesized h-MoO3 nanorods followed by solution processed. The synthesis of h-MoO3 nanorods has been carried out in cost effective manner. The characterization results of Field Emission Electron Microscopy (FESEM) and X-ray diffraction (XRD) results have shown the morphology, phase, and crystallinity of h-MoO3 nanorods. The optical properties were examined using UV-Visible and Raman spectra analysis. Subsequently, we have further investigated the h-MoO3/n-Si heterojunction diode and studied their electrical properties. The current-voltage (I-V) measurements of the heterojunction were carried out at room temperature which shows a rectifying behavior with a rectification ratio of ≈13. This facile fabrication process paves the way for various low-cost applications, especially in the field of sensing and photonics.