Low frequency voltage noise in current biased HTCS thin films

P. Gierlowski; G. Jung; W. Kula; S. J. Lewandowski; B. Savo; R. Sobolewski; A. Tebano; A. Vecchione

doi:10.1016/0921-4526(94)91521-0

Low frequency voltage noise in current biased HTCS thin films

P. Gierlowski, G. Jung, W. Kula, S. J. Lewandowski, B. Savo, R. Sobolewski, A. Tebano, A. Vecchione

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-T_c superconducting thin films. Generally, the spectra scale as 1 f^α, where 0.5 < α < 2 and depends strongly on temperature and dc current flow. We attribute most of the changes in α to the activation of Random Telegraph Signals due to flux hopping processes. However, peaks of excess noise that show out at certain current flows can not be explained by the action of elementary two-level fluctuators, clearly indicating yet another mechanism contributing to the 1 f power spectra.

Original language	English
Pages (from-to)	2043-2044
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	194-196
Issue number	PART 2
DOIs	https://doi.org/10.1016/0921-4526(94)91521-0
State	Published - 2 Feb 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Low frequency voltage noise in current biased HTCS thin films",

abstract = "Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-Tc superconducting thin films. Generally, the spectra scale as 1 fα, where 0.5 < α < 2 and depends strongly on temperature and dc current flow. We attribute most of the changes in α to the activation of Random Telegraph Signals due to flux hopping processes. However, peaks of excess noise that show out at certain current flows can not be explained by the action of elementary two-level fluctuators, clearly indicating yet another mechanism contributing to the 1 f power spectra.",

author = "P. Gierlowski and G. Jung and W. Kula and Lewandowski, {S. J.} and B. Savo and R. Sobolewski and A. Tebano and A. Vecchione",

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doi = "10.1016/0921-4526(94)91521-0",

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T1 - Low frequency voltage noise in current biased HTCS thin films

AU - Gierlowski, P.

AU - Jung, G.

AU - Kula, W.

AU - Lewandowski, S. J.

AU - Savo, B.

AU - Sobolewski, R.

AU - Tebano, A.

AU - Vecchione, A.

PY - 1994/2/2

Y1 - 1994/2/2

N2 - Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-Tc superconducting thin films. Generally, the spectra scale as 1 fα, where 0.5 < α < 2 and depends strongly on temperature and dc current flow. We attribute most of the changes in α to the activation of Random Telegraph Signals due to flux hopping processes. However, peaks of excess noise that show out at certain current flows can not be explained by the action of elementary two-level fluctuators, clearly indicating yet another mechanism contributing to the 1 f power spectra.

AB - Pronounced changes in low-frequency noise power spectra have been observed, close to the transition temperature, in current biased high-Tc superconducting thin films. Generally, the spectra scale as 1 fα, where 0.5 < α < 2 and depends strongly on temperature and dc current flow. We attribute most of the changes in α to the activation of Random Telegraph Signals due to flux hopping processes. However, peaks of excess noise that show out at certain current flows can not be explained by the action of elementary two-level fluctuators, clearly indicating yet another mechanism contributing to the 1 f power spectra.

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U2 - 10.1016/0921-4526(94)91521-0

DO - 10.1016/0921-4526(94)91521-0

M3 - Article

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SN - 0921-4526

VL - 194-196

SP - 2043

EP - 2044

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - PART 2

ER -

Low frequency voltage noise in current biased HTCS thin films

Abstract

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