Low-power global/rolling shutter image sensors in silicon on sapphire technology

Alexander Fish; Evgeny Avner; Orly Yadid-Pecht

doi:10.1109/ISCAS.2005.1464654

Low-power global/rolling shutter image sensors in silicon on sapphire technology

Alexander Fish, Evgeny Avner, Orly Yadid-Pecht

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

A variety of low-power global shutter (snapshot) and rolling shutter Active Pixel Sensors (APS) in Silicon on Sapphire (SOS) technology are presented. Utilizing the floating gate NMOS photodetector, operating in a lateral bipolar transistor (LBT) mode, the described imagers are expected to achieve high responsivity and are mostly suitable for low-power applications. The proposed global shutter sensors enable imaging of fast moving objects in the field of view. Power dissipation of the proposed imagers is reduced by employing an advanced Gate-Diffusion Input (GDI) technique, used for the sensors digital periphery implementation. A test chip, consisting of four different 32*32 global shutter and rolling shutter image sensor arrays, operating at power supply, ranging from 1.2V to 3V, has been implemented in a Peregrine's 0.5μm SOS technology. System architectures and operation of the presented imagers are discussed, and a comparison with existing APS structures is presented as well.

Original language	English
Article number	1464654
Pages (from-to)	580-583
Number of pages	4
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
DOIs	https://doi.org/10.1109/ISCAS.2005.1464654
State	Published - 1 Dec 2005
Event	IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 - Kobe, Japan Duration: 23 May 2005 → 26 May 2005

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ISCAS.2005.1464654

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title = "Low-power global/rolling shutter image sensors in silicon on sapphire technology",

abstract = "A variety of low-power global shutter (snapshot) and rolling shutter Active Pixel Sensors (APS) in Silicon on Sapphire (SOS) technology are presented. Utilizing the floating gate NMOS photodetector, operating in a lateral bipolar transistor (LBT) mode, the described imagers are expected to achieve high responsivity and are mostly suitable for low-power applications. The proposed global shutter sensors enable imaging of fast moving objects in the field of view. Power dissipation of the proposed imagers is reduced by employing an advanced Gate-Diffusion Input (GDI) technique, used for the sensors digital periphery implementation. A test chip, consisting of four different 32*32 global shutter and rolling shutter image sensor arrays, operating at power supply, ranging from 1.2V to 3V, has been implemented in a Peregrine's 0.5μm SOS technology. System architectures and operation of the presented imagers are discussed, and a comparison with existing APS structures is presented as well.",

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AU - Avner, Evgeny

AU - Yadid-Pecht, Orly

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N2 - A variety of low-power global shutter (snapshot) and rolling shutter Active Pixel Sensors (APS) in Silicon on Sapphire (SOS) technology are presented. Utilizing the floating gate NMOS photodetector, operating in a lateral bipolar transistor (LBT) mode, the described imagers are expected to achieve high responsivity and are mostly suitable for low-power applications. The proposed global shutter sensors enable imaging of fast moving objects in the field of view. Power dissipation of the proposed imagers is reduced by employing an advanced Gate-Diffusion Input (GDI) technique, used for the sensors digital periphery implementation. A test chip, consisting of four different 32*32 global shutter and rolling shutter image sensor arrays, operating at power supply, ranging from 1.2V to 3V, has been implemented in a Peregrine's 0.5μm SOS technology. System architectures and operation of the presented imagers are discussed, and a comparison with existing APS structures is presented as well.

AB - A variety of low-power global shutter (snapshot) and rolling shutter Active Pixel Sensors (APS) in Silicon on Sapphire (SOS) technology are presented. Utilizing the floating gate NMOS photodetector, operating in a lateral bipolar transistor (LBT) mode, the described imagers are expected to achieve high responsivity and are mostly suitable for low-power applications. The proposed global shutter sensors enable imaging of fast moving objects in the field of view. Power dissipation of the proposed imagers is reduced by employing an advanced Gate-Diffusion Input (GDI) technique, used for the sensors digital periphery implementation. A test chip, consisting of four different 32*32 global shutter and rolling shutter image sensor arrays, operating at power supply, ranging from 1.2V to 3V, has been implemented in a Peregrine's 0.5μm SOS technology. System architectures and operation of the presented imagers are discussed, and a comparison with existing APS structures is presented as well.

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Low-power global/rolling shutter image sensors in silicon on sapphire technology

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