Low power ovonic threshold switching characteristics of thin GeTe6 films using conductive atomic force microscopy

Anbarasu Manivannan, Santosh Kumar Myana, Kumaraswamy Miriyala, Smriti Sahu, Ranjith Ramadurai

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Minimizing the dimensions of the electrode could directly impact the energy-efficient threshold switching and programming characteristics of phase change memory devices. A ∼12-15 nm AFM probe-tip was employed as one of the electrodes for a systematic study of threshold switching of as-deposited amorphous GeTe6 thin films. This configuration enables low power threshold switching with an extremely low steady state current in the on state of 6-8 nA. Analysis of over 48 different probe locations on the sample reveals a stable Ovonic threshold switching behavior at threshold voltage, VTH of 2.4 ± 0.5 V and the off state was retained below a holding voltage, VH of 0.6 ± 0.1 V. All these probe locations exhibit repeatable on-off transitions for more than 175 pulses at each location. Furthermore, by utilizing longer biasing voltages while scanning, a plausible nano-scale control over the phase change behavior from as-deposited amorphous to crystalline phase was studied.

Original languageEnglish
Article number243501
JournalApplied Physics Letters
Volume105
Issue number24
DOIs
StatePublished - 15 Dec 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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