Low power ovonic threshold switching characteristics of thin GeTe₆ films using conductive atomic force microscopy

Keyphrases

• Low Power 100%
• Conductive Atomic Force Microscopy (C-AFM) 100%
• Switching Characteristics 100%
• Threshold Switching 100%
• Ovonic Threshold Switch 100%
• As-deposited 66%
• Probe Location 66%
• Crystalline Phase 33%
• Energy Efficient 33%
• Threshold Voltage 33%
• Steady State Current 33%
• Bias Voltage 33%
• Switching Behavior 33%
• Power Threshold 33%
• AFM Probe 33%
• Phase Change Random Access Memory (PCRAM) 33%
• Probe Tip 33%
• Holding Voltage 33%
• Nanoscale Control 33%
• Phase Change Behavior 33%

Engineering

• Conductive Atomic Force Microscopy 100%
• Switching Threshold 100%
• Ovonics 100%
• Thin Films 20%
• Energy Engineering 20%
• Nanoscale 20%
• Crystalline Phase 20%
• Holding Voltage 20%
• Probe Tip 20%
• Phase Change Memory 20%

Material Science

• Amorphous Material 100%
• Film 100%
• Crystalline Material 50%
• Thin Films 50%
• Phase-Change Memory 50%