TY - JOUR
T1 - Low-temperature growth (400 °C) of high-integrity thin silicon - Oxynitride films by microwave-excited high-density Kr - O2 - NH3 plasma
AU - Ohtsubo, Kazuo
AU - Saito, Yuji
AU - Hirayama, Masaki
AU - Sugawa, Shigetoshi
AU - Aharoni, Herzl
AU - Ohmi, Tadahiro
PY - 2004/8/1
Y1 - 2004/8/1
N2 - A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000 °C, is realized by using a microwave-excited high-density Kr-O2-NH3 plasma system, which enables their growth at 400 °C. It is shown that the addition of only a minute amount of nitrogen (0.5% NH3 partial pressure) into a growing SiO2 film, in this system, results in a significant improvements in the performance of both thick (7 nm) films, which operate in the Fowler-Nordheim tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.
AB - A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000 °C, is realized by using a microwave-excited high-density Kr-O2-NH3 plasma system, which enables their growth at 400 °C. It is shown that the addition of only a minute amount of nitrogen (0.5% NH3 partial pressure) into a growing SiO2 film, in this system, results in a significant improvements in the performance of both thick (7 nm) films, which operate in the Fowler-Nordheim tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.
UR - http://www.scopus.com/inward/record.url?scp=7244242198&partnerID=8YFLogxK
U2 - 10.1109/TPS.2004.833385
DO - 10.1109/TPS.2004.833385
M3 - Article
AN - SCOPUS:7244242198
SN - 0093-3813
VL - 32
SP - 1747
EP - 1751
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 4 III
ER -