Low-temperature growth (400 °C) of high-integrity thin silicon - Oxynitride films by microwave-excited high-density Kr - O2 - NH3 plasma

Kazuo Ohtsubo, Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, Herzl Aharoni, Tadahiro Ohmi

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

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Physics & Astronomy