Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O2/NH3 plasma

Kazuo Ohtsubo; Yuji Saito; Masaki Hirayama; Shigetoshi Sugawa; Herzl Abaroni; Tadahiro Ohmi

doi:10.1109/EEEI.2002.1178381

Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O₂/NH₃ plasma

Kazuo Ohtsubo, Yuji Saito, Masaki Hirayama, Shigetoshi Sugawa, Herzl Abaroni, Tadahiro Ohmi

Department of Electrical & Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000 °C, is realized, by using microwave-excited high-density Kr/O2/NH3 plasma system, which enables their growth at 400 °C. It is shown that by the addition of only minute amount of nitrogen (0.5 % NH3 partial pressure) into a growing Si02 film, in this system, results a significant improvements in the performance of both thick (7 nm) films which operate in the Fowler-Nordheim (F-N) tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.

Original language	English
Title of host publication	22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings
Publisher	Institute of Electrical and Electronics Engineers
Pages	166-169
Number of pages	4
ISBN (Electronic)	0780376935
DOIs	https://doi.org/10.1109/EEEI.2002.1178381
State	Published - 1 Jan 2002
Event	22nd Convention of Electrical and Electronics Engineers in Israel - Tel-Aviv, Israel Duration: 1 Dec 2002 → …

Publication series

Name	IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings
Volume	2002-January

Conference

Conference	22nd Convention of Electrical and Electronics Engineers in Israel
Country/Territory	Israel
City	Tel-Aviv
Period	1/12/02 → …

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EEEI.2002.1178381

Cite this

Ohtsubo, K., Saito, Y., Hirayama, M., Sugawa, S., Abaroni, H., & Ohmi, T. (2002). Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O₂/NH₃ plasma. In 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings (pp. 166-169). [1178381] (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings; Vol. 2002-January). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/EEEI.2002.1178381

Ohtsubo, Kazuo ; Saito, Yuji ; Hirayama, Masaki et al. / Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O₂/NH₃ plasma. 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers, 2002. pp. 166-169 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings).

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title = "Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O2/NH3 plasma",

abstract = "A drastic reduction of the growth temperature of oxynitride (SiON) films, which are usually grown around 1000 °C, is realized, by using microwave-excited high-density Kr/O2/NH3 plasma system, which enables their growth at 400 °C. It is shown that by the addition of only minute amount of nitrogen (0.5 % NH3 partial pressure) into a growing Si02 film, in this system, results a significant improvements in the performance of both thick (7 nm) films which operate in the Fowler-Nordheim (F-N) tunneling regime, and thin (3 nm) films which operate in the direct tunneling regime.",

author = "Kazuo Ohtsubo and Yuji Saito and Masaki Hirayama and Shigetoshi Sugawa and Herzl Abaroni and Tadahiro Ohmi",

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Ohtsubo, K, Saito, Y, Hirayama, M, Sugawa, S, Abaroni, H & Ohmi, T 2002, Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O₂/NH₃ plasma. in 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings., 1178381, IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings, vol. 2002-January, Institute of Electrical and Electronics Engineers, pp. 166-169, 22nd Convention of Electrical and Electronics Engineers in Israel, Tel-Aviv, Israel, 1/12/02. https://doi.org/10.1109/EEEI.2002.1178381

Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O₂/NH₃ plasma. / Ohtsubo, Kazuo; Saito, Yuji; Hirayama, Masaki et al.

22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers, 2002. p. 166-169 1178381 (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Ohtsubo K, Saito Y, Hirayama M, Sugawa S, Abaroni H, Ohmi T. Low temperature growth (400 °C) of high-integrity thin silicon-oxynitride films by microwave-excited high density Kr/O₂/NH₃ plasma. In 22nd Convention of Electrical and Electronics Engineers in Israel, Proceedings. Institute of Electrical and Electronics Engineers. 2002. p. 166-169. 1178381. (IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings). doi: 10.1109/EEEI.2002.1178381