TY - GEN
T1 - Low-voltage light emitting devices in silicon IC technology
AU - Du Plessis, Monuko
AU - Snyman, Lukas W.
AU - Aharoni, Herzl
PY - 2005/12/1
Y1 - 2005/12/1
N2 - Low-voltage Si-LED operation can be achieved by fabricating devices with heavily doped n+p+ junctions. Differences are observed between high-voltage avalanche and low-voltage field emission LED performance. The low-voltage devices exhibit a non-linear light intensity L vs. reverse current I relationship at low current levels, but a linear dependency at higher currents, compared to the linear behavior of avalanche devices at all current levels. Three regions of operation are identified for the low-voltage field emission LED's, namely L ∝ I3 at low currents, L ∝ I 2 at medium currents and eventually L ∝ I at higher currents. In the low-voltage non-linear region of operation, the shape of the emitted spectrum changes with reverse current. At low reverse current the field emission devices emit more long wavelength radiation than short wavelength radiation. As the reverse current increases, the short wavelength radiation increases relative to the long wavelength radiation, and at higher currents in the linear region of operation the ratio between long and short wavelength radiation remains constant.
AB - Low-voltage Si-LED operation can be achieved by fabricating devices with heavily doped n+p+ junctions. Differences are observed between high-voltage avalanche and low-voltage field emission LED performance. The low-voltage devices exhibit a non-linear light intensity L vs. reverse current I relationship at low current levels, but a linear dependency at higher currents, compared to the linear behavior of avalanche devices at all current levels. Three regions of operation are identified for the low-voltage field emission LED's, namely L ∝ I3 at low currents, L ∝ I 2 at medium currents and eventually L ∝ I at higher currents. In the low-voltage non-linear region of operation, the shape of the emitted spectrum changes with reverse current. At low reverse current the field emission devices emit more long wavelength radiation than short wavelength radiation. As the reverse current increases, the short wavelength radiation increases relative to the long wavelength radiation, and at higher currents in the linear region of operation the ratio between long and short wavelength radiation remains constant.
KW - Electroluminescence
KW - Light emitting device
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=33748370300&partnerID=8YFLogxK
U2 - 10.1109/ISIE.2005.1529085
DO - 10.1109/ISIE.2005.1529085
M3 - Conference contribution
AN - SCOPUS:33748370300
SN - 0780387384
SN - 9780780387386
T3 - IEEE International Symposium on Industrial Electronics
SP - 1145
EP - 1149
BT - Proceedings of the IEEE International Symposium on Industrial Electronics 2005, ISIE 2005
T2 - IEEE International Symposium on Industrial Electronics 2005, ISIE 2005
Y2 - 20 June 2005 through 23 June 2005
ER -