Low-voltage light emitting devices in silicon IC technology

Monuko Du Plessis, Lukas W. Snyman, Herzl Aharoni

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

Low-voltage Si-LED operation can be achieved by fabricating devices with heavily doped n+p+ junctions. Differences are observed between high-voltage avalanche and low-voltage field emission LED performance. The low-voltage devices exhibit a non-linear light intensity L vs. reverse current I relationship at low current levels, but a linear dependency at higher currents, compared to the linear behavior of avalanche devices at all current levels. Three regions of operation are identified for the low-voltage field emission LED's, namely L ∝ I3 at low currents, L ∝ I 2 at medium currents and eventually L ∝ I at higher currents. In the low-voltage non-linear region of operation, the shape of the emitted spectrum changes with reverse current. At low reverse current the field emission devices emit more long wavelength radiation than short wavelength radiation. As the reverse current increases, the short wavelength radiation increases relative to the long wavelength radiation, and at higher currents in the linear region of operation the ratio between long and short wavelength radiation remains constant.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Symposium on Industrial Electronics 2005, ISIE 2005
Pages1145-1149
Number of pages5
DOIs
StatePublished - 1 Dec 2005
Externally publishedYes
EventIEEE International Symposium on Industrial Electronics 2005, ISIE 2005 - Dubrovnik, Croatia
Duration: 20 Jun 200523 Jun 2005

Publication series

NameIEEE International Symposium on Industrial Electronics
VolumeIII

Conference

ConferenceIEEE International Symposium on Industrial Electronics 2005, ISIE 2005
Country/TerritoryCroatia
CityDubrovnik
Period20/06/0523/06/05

Keywords

  • Electroluminescence
  • Light emitting device
  • Silicon

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