TY - GEN
T1 - Low voltage sub-nanosecond pulsed current driver IC for high-resolution LIDAR applications
AU - Abramov, Eli
AU - Evzelman, Michael
AU - Kirshenboim, Or
AU - Urkin, Tom
AU - Peretz, Mor Mordechai
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/4/18
Y1 - 2018/4/18
N2 - This paper introduces a new low voltage sub-nanosecond monolithic pulsed current driver for light detection and ranging (LIDAR) applications. Unique architecture based on a controlled current source and Vernier activation sequence, combined with a monolithic implementation that allows operation with low input voltage levels, high-resolution pulse width and sub-nanosecond rise and fall times. An on-chip low voltage pulsed driver sub-nanosecond prototype has been implemented in a TS 0.18-μm 5V-gated power management process. It incorporates an integrated wide range sesnseFET based current sensor and a rail-to-rail comparator for current regulation. To characterize the avalanche capabilities of the integrated lateral MOSFET power devices required for the driver IC, a separate line of investigation has been carried out. Several lateral diffused MOS (LDMOS) power devices have been custom designed and experimentally evaluated for a life-cycle performance characterization. Post-layout analysis of the power driver IC is in a good agreement with the theoretical predictions. For a 5V input voltage, rise and fall times of the laser pulse light output are on the order of hundreds of picoseconds, with currents up to 5A. To validate the concept of high-resolution pulse width generation and short fall time, a discrete prototype has been constructed and experimentally tested.
AB - This paper introduces a new low voltage sub-nanosecond monolithic pulsed current driver for light detection and ranging (LIDAR) applications. Unique architecture based on a controlled current source and Vernier activation sequence, combined with a monolithic implementation that allows operation with low input voltage levels, high-resolution pulse width and sub-nanosecond rise and fall times. An on-chip low voltage pulsed driver sub-nanosecond prototype has been implemented in a TS 0.18-μm 5V-gated power management process. It incorporates an integrated wide range sesnseFET based current sensor and a rail-to-rail comparator for current regulation. To characterize the avalanche capabilities of the integrated lateral MOSFET power devices required for the driver IC, a separate line of investigation has been carried out. Several lateral diffused MOS (LDMOS) power devices have been custom designed and experimentally evaluated for a life-cycle performance characterization. Post-layout analysis of the power driver IC is in a good agreement with the theoretical predictions. For a 5V input voltage, rise and fall times of the laser pulse light output are on the order of hundreds of picoseconds, with currents up to 5A. To validate the concept of high-resolution pulse width generation and short fall time, a discrete prototype has been constructed and experimentally tested.
KW - Controlled current source IC
KW - Current pulse
KW - Driver IC
KW - LIDAR
KW - Laser diode
KW - Power MOSFET
KW - Pulse circuits on-chip
UR - http://www.scopus.com/inward/record.url?scp=85046940180&partnerID=8YFLogxK
U2 - 10.1109/APEC.2018.8341090
DO - 10.1109/APEC.2018.8341090
M3 - Conference contribution
AN - SCOPUS:85046940180
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 708
EP - 715
BT - APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers
T2 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
Y2 - 4 March 2018 through 8 March 2018
ER -