Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials

Simon Dorfman; David Fuks; Alex Gordon; Peter Wyder

doi:10.1103/PhysRevB.60.R9927

Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials

Simon Dorfman, David Fuks, Alex Gordon, Peter Wyder

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO₃and Pb(Zr, Ti)O₃. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.

Original language	English
Pages (from-to)	R9927-R9930
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.60.R9927
State	Published - 1 Jan 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.60.R9927

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abstract = "Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO3and Pb(Zr, Ti)O3. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.",

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N2 - Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO3and Pb(Zr, Ti)O3. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.

AB - Wetting of the ferroelectric domain walls is studied in external magnetic fields and for composition changes in (Ba, Sr)TiO3and Pb(Zr, Ti)O3. We discuss the sensibility of a domain structure to concentration of alloying element in perovskite ferroelectrics. A considerable magnetic-field- and concentration-induced variation of the ferroelectric domain size and the paraelectric layer width is demonstrated. The concentration-temperature “phase diagram” showing the range of the wetting existence is calculated.

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Magnetic-field- and alloying-induced wetting of the ferroelectric domain structure in some smart materials

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