Magnetoresistance scaling in BaRuO₃

We present measurements of electrical resistivity (ρ) and magnetoresistance (Δρ/ρ) in epitaxial thin films of BaRuO₃ with a hexagonal four-layer structure. The low-temperature resistivity (3 K<T<20 K) shows a quadratic temperature dependence ρ = ρ₀ + aT². Measurements of magnetoresistance in the temperature range of 5 K<T<50 K and fields up to 8 T reveal a failure of the conventional Kohler's rule. On the other hand, we find that the magnetoresistance data can be scaled if one assumes that the resistivity ρ is related to the scattering time τ as ρ∝1/τ^α with α≃0.25.