Abstract
The continuing demand for higher frequency microprocessors and larger memory arrays has led to decreasing device dimensions and smaller process control windows. Decreasing process control windows have created a need for higher precision metrology to maintain an acceptable precision to tolerance ratio with a reasonable sampling rate. In order to determine and reduce across chip, across wafer, and across lot linewidth variations, higher sampling is required which, in turn, demands faster move acquire measure (MAM) times to maintain throughput. Finally, the need to detect and quantify sidewall angle changes in addition to CD measurements is becoming critical. Spectroscopic Scatterometry is a metrology technique which offers the potential to meet these requirements. This work explores some of the fundamental technology concerns for implementing scatterometry in a manufacturing environment. These concerns include mark requirements and characterization necessary for library generation. Comparison of scatterometry data to in-line CD SEM, x-section SEM, and AFM results will be presented.
Original language | English |
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Pages (from-to) | 125-134 |
Number of pages | 10 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3998 |
DOIs | |
State | Published - 1 Jan 2000 |
Externally published | Yes |
Event | Metrology, Inspection, and Process Control for Microlithography XIV - Santa Clara, CA, USA Duration: 28 Feb 2000 → 2 Mar 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering