Silicon diodes built in epitaxial layers of varying parameters were found to exhibit two distinct modes of light-emission dependence on avalanching current prior to secondary breakdown. The modes depend on whether the depletion layer extends to the substrate interface prior to avalanche or not. Current distribution is inferred from the light curve and a possible mechanism leading to the secondary breakdown is suggested.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering