Measurements on Light Emission and Current Distribution in Avalanching Epitaxial Diodes

A. Bar-Lev; H. Aharoni

doi:10.1109/T-ED.1974.17961

Measurements on Light Emission and Current Distribution in Avalanching Epitaxial Diodes

A. Bar-Lev, H. Aharoni

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon diodes built in epitaxial layers of varying parameters were found to exhibit two distinct modes of light-emission dependence on avalanching current prior to secondary breakdown. The modes depend on whether the depletion layer extends to the substrate interface prior to avalanche or not. Current distribution is inferred from the light curve and a possible mechanism leading to the secondary breakdown is suggested.

Original language	English
Pages (from-to)	537-539
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	21
Issue number	8
DOIs	https://doi.org/10.1109/T-ED.1974.17961
State	Published - 1 Jan 1974

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1974.17961

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title = "Measurements on Light Emission and Current Distribution in Avalanching Epitaxial Diodes",

abstract = "Silicon diodes built in epitaxial layers of varying parameters were found to exhibit two distinct modes of light-emission dependence on avalanching current prior to secondary breakdown. The modes depend on whether the depletion layer extends to the substrate interface prior to avalanche or not. Current distribution is inferred from the light curve and a possible mechanism leading to the secondary breakdown is suggested.",

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N2 - Silicon diodes built in epitaxial layers of varying parameters were found to exhibit two distinct modes of light-emission dependence on avalanching current prior to secondary breakdown. The modes depend on whether the depletion layer extends to the substrate interface prior to avalanche or not. Current distribution is inferred from the light curve and a possible mechanism leading to the secondary breakdown is suggested.

AB - Silicon diodes built in epitaxial layers of varying parameters were found to exhibit two distinct modes of light-emission dependence on avalanching current prior to secondary breakdown. The modes depend on whether the depletion layer extends to the substrate interface prior to avalanche or not. Current distribution is inferred from the light curve and a possible mechanism leading to the secondary breakdown is suggested.

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JO - IEEE Transactions on Electron Devices

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Measurements on Light Emission and Current Distribution in Avalanching Epitaxial Diodes

Abstract

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