Abstract
Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflrctometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the structure
Original language | English |
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Patent number | AU3310999 |
IPC | H01L 21/ 66 A I |
Priority date | 25/02/99 |
State | Published - 20 Sep 1999 |