Measuring a diffracting structure, broadband, polarized, ellipsometric, and an underlying structure

Xu Yiping (Inventor), Abdulhalim Ibrahim (Inventor)

Research output: Patent

Abstract

Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflrctometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the structure
Original languageEnglish
Patent numberAU3310999
IPCH01L 21/ 66 A I
Priority date25/02/99
StatePublished - 20 Sep 1999

Fingerprint

Dive into the research topics of 'Measuring a diffracting structure, broadband, polarized, ellipsometric, and an underlying structure'. Together they form a unique fingerprint.

Cite this