Measuring minority-carrier diffusion length using a Kelvin probe force microscope

R. Shikler, N. Fried, T. Meoded, Y. Rosenwaks

Research output: Contribution to journalArticlepeer-review

47 Scopus citations


A method based on Kelvin probe force microscopy for measuring minority-carrier diffusion length in semiconductors is described. The method is based on measuring the surface photovoltage between the tip of an atomic force microscope and the surface of an illuminated semiconductor junction. The photogenerated carriers diffuse to the junction and change the contact potential difference between the tip and the sample, as a function of the distance from the junction. The diffusion length L is then obtained by fitting the measured contact potential difference using the minority-carrier continuity equation. The method was applied to measurements of electron diffusion length in GaP (Formula presented) and Schottky junctions. The measured diffusion length was found to be (Formula presented) in good agreement with electron beam induced current measurements.

Original languageEnglish
Pages (from-to)11041-11046
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - 1 Jan 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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