Metal to insulator transition at the surface of V2O3 thin films: An in-situ view

M. Caputo; J. Jandke; E. Cappelli; S. K. Chaluvadi; E. Bonini Guedes; M. Naamneh; G. Vinai; J. Fujii; P. Torelli; I. Vobornik; A. Goldoni; P. Orgiani; F. Baumberger; M. Radovic; G. Panaccione

doi:10.1016/j.apsusc.2021.151608

Metal to insulator transition at the surface of V₂O₃ thin films: An in-situ view

M. Caputo, J. Jandke, E. Cappelli, S. K. Chaluvadi, E. Bonini Guedes, M. Naamneh, G. Vinai, J. Fujii, P. Torelli, I. Vobornik, A. Goldoni, P. Orgiani, F. Baumberger, M. Radovic, G. Panaccione

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

V₂O₃ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by means of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk V₂O₃. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition in V₂O₃ by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of V₂O₃ thin films in device-oriented heterostructures.

Original language	English
Article number	151608
Journal	Applied Surface Science
Volume	574
DOIs	https://doi.org/10.1016/j.apsusc.2021.151608
State	Published - 1 Feb 2022
Externally published	Yes

Keywords

ARPES
MIT
PLD
VO
in-situ transfer

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2021.151608

Cite this

Caputo, M., Jandke, J., Cappelli, E., Chaluvadi, S. K., Bonini Guedes, E., Naamneh, M., Vinai, G., Fujii, J., Torelli, P., Vobornik, I., Goldoni, A., Orgiani, P., Baumberger, F., Radovic, M., & Panaccione, G. (2022). Metal to insulator transition at the surface of V₂O₃ thin films: An in-situ view. Applied Surface Science, 574, Article 151608. https://doi.org/10.1016/j.apsusc.2021.151608

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abstract = "V2O3 has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by means of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk V2O3. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition in V2O3 by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of V2O3 thin films in device-oriented heterostructures.",

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T2 - An in-situ view

AU - Caputo, M.

AU - Jandke, J.

AU - Cappelli, E.

AU - Chaluvadi, S. K.

AU - Bonini Guedes, E.

AU - Naamneh, M.

AU - Vinai, G.

AU - Fujii, J.

AU - Torelli, P.

AU - Vobornik, I.

AU - Goldoni, A.

AU - Orgiani, P.

AU - Baumberger, F.

AU - Radovic, M.

AU - Panaccione, G.

PY - 2022/2/1

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AB - V2O3 has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by means of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk V2O3. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition in V2O3 by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of V2O3 thin films in device-oriented heterostructures.

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