Method for fast and accurate calibration of litho simulator for hot spot analysis

Stefan Jank; Vlad Temchenko; Paul G. Karakatsanis; Ramana Veerasingam; Rakesh Vallishayee; Christoph Dolainsky; Xiaojing Yang; Bong Ryoul Choi; Youval Nehmadi; Moshe Poyastro

doi:10.1109/ISSM.2006.4493134

Method for fast and accurate calibration of litho simulator for hot spot analysis

Stefan Jank, Vlad Temchenko, Paul G. Karakatsanis, Ramana Veerasingam, Rakesh Vallishayee, Christoph Dolainsky, Xiaojing Yang, Bong Ryoul Choi, Youval Nehmadi, Moshe Poyastro

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Deploying OPC that is robust over the process window is becoming more and more challenging as geometries shrink^{i ii}. This challenge has a major impact in time-to-market and yield of new products. This paper describes a litho simulator calibration flow using a streamlined OPC verification methodology. This new methodology successfully bridges design and manufacturing to accelerate the OPC development process and proactively identifies weak OPC locations that can reduce yield. The method includes an accurate simulator calibration using automatically obtained 'on silicon' measurement data, followed by full-chip litho simulation using the calibrated model to identify potential hot spots on product. The method also enabled a short cycle feedback loop to the OPC model generation resulting in improved OPC optimization and verification.

Original language	English
Title of host publication	ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing
Pages	453-456
Number of pages	4
DOIs	https://doi.org/10.1109/ISSM.2006.4493134
State	Published - 1 Dec 2006
Externally published	Yes
Event	ISSM 2006 - 15th International Symposium on Semiconductor Manufacturing - Tokyo, Japan Duration: 25 Sep 2007 → 27 Sep 2007

Publication series

Name	IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN (Print)	1523-553X

Conference

Conference	ISSM 2006 - 15th International Symposium on Semiconductor Manufacturing
Country/Territory	Japan
City	Tokyo
Period	25/09/07 → 27/09/07

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISSM.2006.4493134

Cite this

Jank, S., Temchenko, V., Karakatsanis, P. G., Veerasingam, R., Vallishayee, R., Dolainsky, C., Yang, X., Choi, B. R., Nehmadi, Y., & Poyastro, M. (2006). Method for fast and accurate calibration of litho simulator for hot spot analysis. In ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing (pp. 453-456). Article 4493134 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). https://doi.org/10.1109/ISSM.2006.4493134

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title = "Method for fast and accurate calibration of litho simulator for hot spot analysis",

abstract = "Deploying OPC that is robust over the process window is becoming more and more challenging as geometries shrinki ii. This challenge has a major impact in time-to-market and yield of new products. This paper describes a litho simulator calibration flow using a streamlined OPC verification methodology. This new methodology successfully bridges design and manufacturing to accelerate the OPC development process and proactively identifies weak OPC locations that can reduce yield. The method includes an accurate simulator calibration using automatically obtained 'on silicon' measurement data, followed by full-chip litho simulation using the calibrated model to identify potential hot spots on product. The method also enabled a short cycle feedback loop to the OPC model generation resulting in improved OPC optimization and verification.",

author = "Stefan Jank and Vlad Temchenko and Karakatsanis, {Paul G.} and Ramana Veerasingam and Rakesh Vallishayee and Christoph Dolainsky and Xiaojing Yang and Choi, {Bong Ryoul} and Youval Nehmadi and Moshe Poyastro",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ISSM.2006.4493134",

language = "English",

isbn = "9784990413804",

series = "IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings",

pages = "453--456",

booktitle = "ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing",

note = "ISSM 2006 - 15th International Symposium on Semiconductor Manufacturing ; Conference date: 25-09-2007 Through 27-09-2007",

}

Jank, S, Temchenko, V, Karakatsanis, PG, Veerasingam, R, Vallishayee, R, Dolainsky, C, Yang, X, Choi, BR, Nehmadi, Y & Poyastro, M 2006, Method for fast and accurate calibration of litho simulator for hot spot analysis. in ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing., 4493134, IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, pp. 453-456, ISSM 2006 - 15th International Symposium on Semiconductor Manufacturing, Tokyo, Japan, 25/09/07. https://doi.org/10.1109/ISSM.2006.4493134

Method for fast and accurate calibration of litho simulator for hot spot analysis. / Jank, Stefan; Temchenko, Vlad; Karakatsanis, Paul G. et al.
ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing. 2006. p. 453-456 4493134 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Method for fast and accurate calibration of litho simulator for hot spot analysis

AU - Jank, Stefan

AU - Temchenko, Vlad

AU - Karakatsanis, Paul G.

AU - Veerasingam, Ramana

AU - Vallishayee, Rakesh

AU - Dolainsky, Christoph

AU - Yang, Xiaojing

AU - Choi, Bong Ryoul

AU - Nehmadi, Youval

AU - Poyastro, Moshe

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Deploying OPC that is robust over the process window is becoming more and more challenging as geometries shrinki ii. This challenge has a major impact in time-to-market and yield of new products. This paper describes a litho simulator calibration flow using a streamlined OPC verification methodology. This new methodology successfully bridges design and manufacturing to accelerate the OPC development process and proactively identifies weak OPC locations that can reduce yield. The method includes an accurate simulator calibration using automatically obtained 'on silicon' measurement data, followed by full-chip litho simulation using the calibrated model to identify potential hot spots on product. The method also enabled a short cycle feedback loop to the OPC model generation resulting in improved OPC optimization and verification.

AB - Deploying OPC that is robust over the process window is becoming more and more challenging as geometries shrinki ii. This challenge has a major impact in time-to-market and yield of new products. This paper describes a litho simulator calibration flow using a streamlined OPC verification methodology. This new methodology successfully bridges design and manufacturing to accelerate the OPC development process and proactively identifies weak OPC locations that can reduce yield. The method includes an accurate simulator calibration using automatically obtained 'on silicon' measurement data, followed by full-chip litho simulation using the calibrated model to identify potential hot spots on product. The method also enabled a short cycle feedback loop to the OPC model generation resulting in improved OPC optimization and verification.

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M3 - Conference contribution

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T3 - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

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Jank S, Temchenko V, Karakatsanis PG, Veerasingam R, Vallishayee R, Dolainsky C et al. Method for fast and accurate calibration of litho simulator for hot spot analysis. In ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing. 2006. p. 453-456. 4493134. (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). doi: 10.1109/ISSM.2006.4493134

Method for fast and accurate calibration of litho simulator for hot spot analysis

Abstract

Publication series

Conference

ASJC Scopus subject areas

UN SDGs

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