Microcrack-induced strain relief in GaN AlN quantum dots grown on Si(111)

G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, B. Damilano

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


The optical properties of vertically stacked self-assembled GaN AlN quantum dots (QD's) grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence (CL). An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD luminescence was performed near stress-induced microcracks, revealing changes in the optical properties that can be attributed to stress-dependent variations in the band edges, the polarization field, and the oscillator strength between electrons and holes. Three-dimensional 6×6 k p calculations of the QD electron and hole wave functions and eigenstates were performed to examine the influence of biaxial and uniaxial stresses on the optical properties in varying proximity to the microcracks.

Original languageEnglish
Article number075306
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - 6 Feb 2007

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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