Microstructural and light emission properties of ZnSnP2 thin film absorber: Study of native defects

S. Mukherjee; T. Maitra; A. Nayak; S. Mukherjee; A. Pradhan; M. K. Mukhopadhyay; B. Satpati; S. Bhunia

doi:10.1016/j.matchemphys.2017.10.014

Microstructural and light emission properties of ZnSnP₂ thin film absorber: Study of native defects

S. Mukherjee, T. Maitra, A. Nayak, S. Mukherjee, A. Pradhan, M. K. Mukhopadhyay, B. Satpati, S. Bhunia

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Thin films of ZnSnP₂ were successfully grown on p-type silicon (001), sapphire and glass substrate by e-beam evaporation method. The as-deposited films were characterized using scanning and high resolution transmission electron microscopes, reflectance and transmittance spectroscopy and photoluminescence measurement at low temperature. Polycrystalline nature of the films was verified by high resolution transmission electron microscopy. An optical band gap of 1.71 eV was estimated at room temperature. Two broad luminescence bands at 1.529 eV and at 1.634 eV were observed at 15 K. The light emission characteristics of the ZnSnP₂ were explained in terms of donor-acceptor pair recombination mechanism. Tin-on-zinc sites and zinc vacancies/zinc-on-tin sites were considered as donor and acceptor due to presence of native defects in the films. A schematic band model based on the experimental finding was suggested to account for the DA pair recombination.

Original language	English
Pages (from-to)	147-153
Number of pages	7
Journal	Materials Chemistry and Physics
Volume	204
DOIs	https://doi.org/10.1016/j.matchemphys.2017.10.014
State	Published - 15 Jan 2018
Externally published	Yes

Keywords

Direct optical transition
Donor-acceptor pair
Electron-beam evaporation
Photoluminescence
Solar cell absorber
Thin film

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.matchemphys.2017.10.014

Cite this

@article{8a91ed2e4d694f578e63a377c0ea1ab9,

title = "Microstructural and light emission properties of ZnSnP2 thin film absorber: Study of native defects",

abstract = "Thin films of ZnSnP2 were successfully grown on p-type silicon (001), sapphire and glass substrate by e-beam evaporation method. The as-deposited films were characterized using scanning and high resolution transmission electron microscopes, reflectance and transmittance spectroscopy and photoluminescence measurement at low temperature. Polycrystalline nature of the films was verified by high resolution transmission electron microscopy. An optical band gap of 1.71 eV was estimated at room temperature. Two broad luminescence bands at 1.529 eV and at 1.634 eV were observed at 15 K. The light emission characteristics of the ZnSnP2 were explained in terms of donor-acceptor pair recombination mechanism. Tin-on-zinc sites and zinc vacancies/zinc-on-tin sites were considered as donor and acceptor due to presence of native defects in the films. A schematic band model based on the experimental finding was suggested to account for the DA pair recombination.",

keywords = "Direct optical transition, Donor-acceptor pair, Electron-beam evaporation, Photoluminescence, Solar cell absorber, Thin film",

author = "S. Mukherjee and T. Maitra and A. Nayak and S. Mukherjee and A. Pradhan and Mukhopadhyay, {M. K.} and B. Satpati and S. Bhunia",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = jan,

day = "15",

doi = "10.1016/j.matchemphys.2017.10.014",

language = "English",

volume = "204",

pages = "147--153",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

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TY - JOUR

T1 - Microstructural and light emission properties of ZnSnP2 thin film absorber

T2 - Study of native defects

AU - Mukherjee, S.

AU - Maitra, T.

AU - Nayak, A.

AU - Mukherjee, S.

AU - Pradhan, A.

AU - Mukhopadhyay, M. K.

AU - Satpati, B.

AU - Bhunia, S.

PY - 2018/1/15

Y1 - 2018/1/15

N2 - Thin films of ZnSnP2 were successfully grown on p-type silicon (001), sapphire and glass substrate by e-beam evaporation method. The as-deposited films were characterized using scanning and high resolution transmission electron microscopes, reflectance and transmittance spectroscopy and photoluminescence measurement at low temperature. Polycrystalline nature of the films was verified by high resolution transmission electron microscopy. An optical band gap of 1.71 eV was estimated at room temperature. Two broad luminescence bands at 1.529 eV and at 1.634 eV were observed at 15 K. The light emission characteristics of the ZnSnP2 were explained in terms of donor-acceptor pair recombination mechanism. Tin-on-zinc sites and zinc vacancies/zinc-on-tin sites were considered as donor and acceptor due to presence of native defects in the films. A schematic band model based on the experimental finding was suggested to account for the DA pair recombination.

AB - Thin films of ZnSnP2 were successfully grown on p-type silicon (001), sapphire and glass substrate by e-beam evaporation method. The as-deposited films were characterized using scanning and high resolution transmission electron microscopes, reflectance and transmittance spectroscopy and photoluminescence measurement at low temperature. Polycrystalline nature of the films was verified by high resolution transmission electron microscopy. An optical band gap of 1.71 eV was estimated at room temperature. Two broad luminescence bands at 1.529 eV and at 1.634 eV were observed at 15 K. The light emission characteristics of the ZnSnP2 were explained in terms of donor-acceptor pair recombination mechanism. Tin-on-zinc sites and zinc vacancies/zinc-on-tin sites were considered as donor and acceptor due to presence of native defects in the films. A schematic band model based on the experimental finding was suggested to account for the DA pair recombination.

KW - Direct optical transition

KW - Donor-acceptor pair

KW - Electron-beam evaporation

KW - Photoluminescence

KW - Solar cell absorber

KW - Thin film

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U2 - 10.1016/j.matchemphys.2017.10.014

DO - 10.1016/j.matchemphys.2017.10.014

M3 - Article

AN - SCOPUS:85034071448

SN - 0254-0584

VL - 204

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EP - 153

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

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