Microstructure and mechanical properties of silicon carbide processed by Spark Plasma Sintering (SPS)

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Abstract

The unique combination of SiC properties opens the ways for a wide range of SiC-based industrial applications. Dense silicon carbide bodies (3.18±0.01 g/cm 3) were obtained by an SPS treatment at 2050 °C for 10 min using a heating rate of 400 °C/min, under an applied pressure of 69 MPa. The microstructure consists of fine, equiaxed grains with an average grain size of 1.29±0.65 μm. TEM analysis showed the presence of nano-size particles at the grain boundaries and at the triple-junctions, formed mainly from the impurities present in the starting silicon carbide powder. The HRTEM examination revealed high angle and clean grain boundaries. The measured static mechanical properties (H V=32 GPa, E=440 GPa, σ b=490 MPa and K C 6.8 MPa m 0.5) and the Hugoniot Elastic Limit (HEL=18 GPa) are higher than those of hot-pressed silicon carbide samples.

Original languageEnglish
Pages (from-to)6335-6340
Number of pages6
JournalCeramics International
Volume38
Issue number8
DOIs
StatePublished - 1 Dec 2012

Keywords

  • B. Microstructure
  • Dynamic mechanical proprieties
  • Silicon carbide
  • Spark Plasma Sintering (SPS)

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