Microstructure and morphology evolution in chemical solution deposited semiconductor films: 3. PbSe on GaAs vs. Si substrate

M. Shandalov, Y. Golan

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

The microstructure and morphology evolution in nanocrystalline PbSe films chemically deposited on GaAs(100) and GaAs(111) substrates were compared to PbSe films on Si(100) under the same conditions. On GaAs substrates, dense and continuous PbSe films were obtained. We show that the temperature dependent morphological changes on GaAs substrates occurred as a result of increased sample thickness due to higher reaction rates. Notably, the deposition of PbSe on Si(100) did not lead to continuous films and no preferred orientation was observed. The improved wetting between PbSe and GaAs appears to be a key factor responsible for the differences observed on the two substrates.

Original languageEnglish
Pages (from-to)27-30
Number of pages4
JournalEPJ Applied Physics
Volume31
Issue number1
DOIs
StatePublished - 1 Jul 2005

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