Microstructure related transport phenomena in chemically deposited PbSe films

M. Shandalov, Z. Dashevsky, Y. Golan

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We report on the electrical properties of chemically deposited PbSe films with controlled microstructure ranging from nanocrystalline to single crystal films. Control over the deposition mechanism consequently allowed control over the physical properties of the obtained films. The electrical conductivity, carrier concentration, drift mobility and carrier scattering mechanism were correlated with the film morphology. In polycrystalline PbSe films, the activation energy of the electrical conductivity is governed by the nature of the grain boundaries. In monocrystalline PbSe films, conductivity vs. temperature depends on carrier scattering from lattice vibrations.

Original languageEnglish
Pages (from-to)132-135
Number of pages4
JournalMaterials Chemistry and Physics
Volume112
Issue number1
DOIs
StatePublished - 15 Nov 2008

Keywords

  • Chemical deposition
  • Electrical characterization
  • Electrical properties
  • Lead selenide
  • Semiconductors

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics

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