Millimeter-wave generation and digital modulation in an InGaAs-InP heterojunction phototransistor: Model and experimental characterization of dynamics and noise

Keyphrases

• InGaAs 100%
• Digital Modulation 100%
• Heterojunction Phototransistor 100%
• Bipolar Transistor 100%
• Model Characterization 100%
• Experimental Characterization 100%
• Millimeter-wave Generation 100%
• Transistor 50%
• Mixing Process 50%
• Bit Error Rate 50%
• Noise Correlation 50%
• Millimeter Wave 50%
• Noise Source 50%
• Carrier-to-noise Ratio 50%
• Time-domain Response 50%
• Digital Drive 50%
• Nonlinear Unmixing 50%
• Coherent Signals 50%
• Modulation Rate 50%
• Frequency Domain Response 50%
• Driving Signal 50%
• Distributed Effects 50%
• Amplifier Noise 50%
• Operation Frequency 50%
• Operating Point 50%
• Large-signal Model 50%
• Optical Amplifiers 50%
• Optical Power 50%
• Ratio-dependence 50%
• Optical Mixing 50%

Engineering

• Indium Gallium Arsenide 100%
• Heterojunctions 100%
• Millimeter Wave 100%
• Digital Modulation 100%
• Phototransistor 100%
• Experimental Characterization 100%
• Bipolar Transistor 66%
• Time Domain 33%
• Bit Error Rate 33%
• Optical Power 33%
• Frequency Domain 33%
• Operating Point 33%
• Domain Response 33%
• Modulation Rate 33%
• Signal Model 33%
• Noise Ratio 33%
• Frequency Operation 33%
• Optical Amplifier 33%
• Noise Source 33%

Physics

• Heterojunctions 100%
• Bipolar Transistor 100%
• Phototransistor 100%
• Wave Generation 100%
• Bit Error Rate 50%
• Carrier to Noise Ratios 50%
• Light Amplifier 50%
• Optical Power 50%