Minority carrier transport in p-ZnO nanowires

Y. Lin, M. Shatkhin, E. Flitsiyan, L. Chernyak, Z. Dashevsky, S. Chu, J. L. Liu

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 μm thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74±5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247±10 meV, likely related to SbZ n-2VZn acceptor-complex.

Original languageEnglish
Article number016107
JournalJournal of Applied Physics
Volume109
Issue number1
DOIs
StatePublished - 1 Jan 2011

ASJC Scopus subject areas

  • Physics and Astronomy (all)

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