Minority carrier transport in p-ZnO nanowires

Y. Lin; M. Shatkhin; E. Flitsiyan; L. Chernyak; Z. Dashevsky; S. Chu; J. L. Liu

doi:10.1063/1.3530732

Minority carrier transport in p-ZnO nanowires

Y. Lin, M. Shatkhin, E. Flitsiyan, L. Chernyak, Z. Dashevsky, S. Chu, J. L. Liu

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 μm thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74±5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247±10 meV, likely related to SbZ _n-2VZ_n acceptor-complex.

Original language	English
Article number	016107
Journal	Journal of Applied Physics
Volume	109
Issue number	1
DOIs	https://doi.org/10.1063/1.3530732
State	Published - 1 Jan 2011

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General Physics and Astronomy

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title = "Minority carrier transport in p-ZnO nanowires",

abstract = "In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 μm thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74±5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247±10 meV, likely related to SbZ n-2VZn acceptor-complex.",

author = "Y. Lin and M. Shatkhin and E. Flitsiyan and L. Chernyak and Z. Dashevsky and S. Chu and Liu, {J. L.}",

note = "Funding Information: The authors would like to thank the National Science Foundation (ECCS Grant No. 0900971) and the U.S.-Israel Binational Science Foundation (Grant No. 2008328) for financial support.",

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AU - Lin, Y.

AU - Shatkhin, M.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Dashevsky, Z.

AU - Chu, S.

AU - Liu, J. L.

N1 - Funding Information: The authors would like to thank the National Science Foundation (ECCS Grant No. 0900971) and the U.S.-Israel Binational Science Foundation (Grant No. 2008328) for financial support.

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Y1 - 2011/1/1

N2 - In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 μm thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74±5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247±10 meV, likely related to SbZ n-2VZn acceptor-complex.

AB - In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 μm thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74±5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247±10 meV, likely related to SbZ n-2VZn acceptor-complex.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Minority carrier transport in p-ZnO nanowires

Abstract

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