Minority carrier transport in ZnO and related materials

Elena Flitsyian, Zinovy Dashevsky, Leonid Chernyak

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

Transport properties of minority carriers in ZnO and related compounds are of critical importance for the functionality of bipolar devices. This review summarizes the available information on the subject of minority carrier transport in ZnO-based semiconductors, focusing on its temperature dependence and the dynamics of nonequilibrium carrier recombination. The influence of deep traps on minority carrier diffusion length and lifetime is discussed. The experimental results, showing the impact of minority carrier transport on the performance of bipolar devices, as well as a discussion of techniques, used formeasurements of theminority carrier diffusion length and lifetime, are provided.

Original languageEnglish
Title of host publicationGaN and ZnO-based Materials and Devices
EditorsStephen Pearton
Pages317-347
Number of pages31
Edition1
DOIs
StatePublished - 10 Dec 2012

Publication series

NameSpringer Series in Materials Science
Number1
Volume156
ISSN (Print)0933-033X

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