Model for passive mode locking in semiconductor lasers

Andrei G. Vladimirov; Dmitry Turaev

doi:10.1103/PhysRevA.72.033808

Model for passive mode locking in semiconductor lasers

Andrei G. Vladimirov, Dmitry Turaev

Department of Mathematics

Research output: Contribution to journal › Article › peer-review

258 Scopus citations

Abstract

We derive and study a model describing passive mode locking-a set of differential equations with time delay. Unlike classical mode locking models based on the Haus master equation, this model does not assume small gain and loss per cavity round trip. Therefore, it is valid in a parameter range typical of semiconductor lasers. The limit of a slow saturable absorber is analyzed analytically. Bifurcations responsible for the appearance and breakup of the mode locking regime are studied numerically.

Original language	English
Article number	033808
Journal	Physical Review A - Atomic, Molecular, and Optical Physics
Volume	72
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevA.72.033808
State	Published - 1 Sep 2005

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1103/PhysRevA.72.033808

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abstract = "We derive and study a model describing passive mode locking-a set of differential equations with time delay. Unlike classical mode locking models based on the Haus master equation, this model does not assume small gain and loss per cavity round trip. Therefore, it is valid in a parameter range typical of semiconductor lasers. The limit of a slow saturable absorber is analyzed analytically. Bifurcations responsible for the appearance and breakup of the mode locking regime are studied numerically.",

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AB - We derive and study a model describing passive mode locking-a set of differential equations with time delay. Unlike classical mode locking models based on the Haus master equation, this model does not assume small gain and loss per cavity round trip. Therefore, it is valid in a parameter range typical of semiconductor lasers. The limit of a slow saturable absorber is analyzed analytically. Bifurcations responsible for the appearance and breakup of the mode locking regime are studied numerically.

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Model for passive mode locking in semiconductor lasers

Abstract

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