Modeling and evaluation of diode reverse recovery in discrete-transition simulators

Natan Krihely, Sam Ben-Yaakov

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

Discrete transition simulators usually do not apply full physical models of devices and as a result, they are incapable of showing parasitic processes such as diode reverse recovery. The main objective of this study was to develop a behavioral model of diode reverse recovery that can be implemented in these simulators. The proposed model is based on the lumped charge control concept. It can be easily extracted from a simple measurement and it does not require heavy computational resources. The model was tested within the PSIM platform and was verified experimentally for various turn-off conditions. Model application is exemplified by investigating a lossless snubber of a three-phase buck-type rectifier.

Original languageEnglish
Title of host publication2010 IEEE Energy Conversion Congress and Exposition, ECCE 2010 - Proceedings
Pages4514-4520
Number of pages7
DOIs
StatePublished - 20 Dec 2010
Event2010 2nd IEEE Energy Conversion Congress and Exposition, ECCE 2010 - Atlanta, GA, United States
Duration: 12 Sep 201016 Sep 2010

Publication series

Name2010 IEEE Energy Conversion Congress and Exposition, ECCE 2010 - Proceedings

Conference

Conference2010 2nd IEEE Energy Conversion Congress and Exposition, ECCE 2010
Country/TerritoryUnited States
CityAtlanta, GA
Period12/09/1016/09/10

Keywords

  • Discrete event simulation
  • Modeling
  • Power semiconductor diodes
  • Snubbers
  • Spice

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment

Fingerprint

Dive into the research topics of 'Modeling and evaluation of diode reverse recovery in discrete-transition simulators'. Together they form a unique fingerprint.

Cite this