Abstract
The atomistic simulations in the framework of the Generalized Simulated Annealing approach (GSA) and classical force fields lead to very reasonable relaxed geometries around the carbon interstitial in O-, T-, and TS-sites. We have thus shown that a highly efficient energy-sampling and relaxation scheme, implemented with tight constraints on a limited volume, provides a powerful steering mechanism for selection of geometries suitable for detailed investigation by first-principles methods. The results, based upon harmonic interactions between Cu atoms and a van der Waals interaction between Cu and C, predict the relaxed O-site to be more stable than the T-site by ∼1.2 eV, in accordance with general expectations. The TS barrier to O - O diffusion is found to be ∼0.8 eV, at a temperature of 0 K; the TS exhibits a strong local axial distortion of the pseudo-octahedral environment. The Density Functional results indicate a charge transfer of ∼1 e to carbon, mostly from the first neighbor shell, in all relaxed environments studied. Bond-order data show the Cu-C interaction to be bonding in nature, despite the net 'repulsive interaction' leading to a surface state of lower net energy.
Original language | English |
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Pages (from-to) | 123-127 |
Number of pages | 5 |
Journal | Materials Science in Semiconductor Processing |
Volume | 3 |
Issue number | 1-2 |
DOIs | |
State | Published - 1 Jan 2000 |
Event | 1999 E-MRS Spring Meeting Symposium L: Ab Inito Approches to Microelectronics Materials and Process Modelling - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering