Modification of electrical activity of grain boundaries in EFG silicon under influence of hydrogen plasma

A. Fedotov, A. Mazanik, E. A. Katz

    Research output: Contribution to journalArticlepeer-review

    1 Scopus citations

    Abstract

    We investigated an influence of hydrogen plasma treatment on electrical properties of shaped silicon polycrystals. Hydrogen penetration into polycrystalline silicon is demonstrated to depend on the state of the crystal (as-grown or annealed) and type of grain boundary (general or weakly deviated from special orientations). It is found that interaction of atomic hydrogen with grain boundaries can result not only in decrease of their electrical activity, but also in increase of potential barrier height at relatively high (more than 2 × 1018 cm-2) doses of incorporated hydrogen. This phenomenon is explained by a phenomenological model which takes into account passivation of grain boundary dangling bonds and boron atoms in the bulk as two main mechanisms controlling hydrogenation effect.

    Original languageEnglish
    Pages (from-to)169-173
    Number of pages5
    JournalInterface Science
    Volume9
    Issue number3-4
    DOIs
    StatePublished - 1 Nov 2001

    Keywords

    • Grain boundaries
    • Hydrogenation
    • Passivation
    • Polycrystalline silicon

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Science (all)
    • Condensed Matter Physics

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