Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide

C. S. Pathak, J. P. Singh, R. Singh

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We report about the fabrication and electrical characterization of heterojunction diodes between poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) doped with dimethyl sulfoxide (DMSO) and p-Si. Electrical characterization of the heterojunction diodes was performed using current-voltage (I-V) measurements. The heterojunction diodes showed good rectifying behavior. Interestingly, for 5 vol.% doping concentration of DMSO, the heterojunction diode showed the best diode characteristics with an ideality factor of 1.9. The doping of DMSO into PEDOT:PSS solution resulted in an increase in the conductivity of films by two orders of magnitude and the films showed high optical transmission (>85%) in the visible region.

Original languageEnglish
Pages (from-to)162-166
Number of pages5
JournalChemical Physics Letters
Volume652
DOIs
StatePublished - 16 May 2016
Externally publishedYes

Keywords

  • DMSO
  • Electrical properties
  • Heterojunction
  • PEDOT:PSS

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry

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