Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide

C. S. Pathak; J. P. Singh; R. Singh

doi:10.1016/j.cplett.2016.04.029

Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide

C. S. Pathak, J. P. Singh, R. Singh

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report about the fabrication and electrical characterization of heterojunction diodes between poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) doped with dimethyl sulfoxide (DMSO) and p-Si. Electrical characterization of the heterojunction diodes was performed using current-voltage (I-V) measurements. The heterojunction diodes showed good rectifying behavior. Interestingly, for 5 vol.% doping concentration of DMSO, the heterojunction diode showed the best diode characteristics with an ideality factor of 1.9. The doping of DMSO into PEDOT:PSS solution resulted in an increase in the conductivity of films by two orders of magnitude and the films showed high optical transmission (>85%) in the visible region.

Original language	English
Pages (from-to)	162-166
Number of pages	5
Journal	Chemical Physics Letters
Volume	652
DOIs	https://doi.org/10.1016/j.cplett.2016.04.029
State	Published - 16 May 2016
Externally published	Yes

Keywords

DMSO
Electrical properties
Heterojunction
PEDOT:PSS

ASJC Scopus subject areas

Physics and Astronomy (all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2016.04.029

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@article{c9b9ee09b43d48909c3d3f68c8ef07b4,

title = "Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide",

abstract = "We report about the fabrication and electrical characterization of heterojunction diodes between poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) doped with dimethyl sulfoxide (DMSO) and p-Si. Electrical characterization of the heterojunction diodes was performed using current-voltage (I-V) measurements. The heterojunction diodes showed good rectifying behavior. Interestingly, for 5 vol.% doping concentration of DMSO, the heterojunction diode showed the best diode characteristics with an ideality factor of 1.9. The doping of DMSO into PEDOT:PSS solution resulted in an increase in the conductivity of films by two orders of magnitude and the films showed high optical transmission (>85%) in the visible region.",

keywords = "DMSO, Electrical properties, Heterojunction, PEDOT:PSS",

author = "Pathak, {C. S.} and Singh, {J. P.} and R. Singh",

note = "Funding Information: One of the authors (CSP) acknowledges IIT Delhi for providing senior research fellowship. The authors acknowledge Department of Electronics and Information Technology ( DeitY ) Government of India for partial financial support for this work and Nanoscale Research Facility ( NRF ) at IIT Delhi for AFM and Raman measurements. Publisher Copyright: {\textcopyright}2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = may,

day = "16",

doi = "10.1016/j.cplett.2016.04.029",

language = "English",

volume = "652",

pages = "162--166",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier",

}

TY - JOUR

T1 - Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide

AU - Pathak, C. S.

AU - Singh, J. P.

AU - Singh, R.

N1 - Funding Information: One of the authors (CSP) acknowledges IIT Delhi for providing senior research fellowship. The authors acknowledge Department of Electronics and Information Technology ( DeitY ) Government of India for partial financial support for this work and Nanoscale Research Facility ( NRF ) at IIT Delhi for AFM and Raman measurements. Publisher Copyright: ©2016 Elsevier B.V. All rights reserved.

PY - 2016/5/16

Y1 - 2016/5/16

N2 - We report about the fabrication and electrical characterization of heterojunction diodes between poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) doped with dimethyl sulfoxide (DMSO) and p-Si. Electrical characterization of the heterojunction diodes was performed using current-voltage (I-V) measurements. The heterojunction diodes showed good rectifying behavior. Interestingly, for 5 vol.% doping concentration of DMSO, the heterojunction diode showed the best diode characteristics with an ideality factor of 1.9. The doping of DMSO into PEDOT:PSS solution resulted in an increase in the conductivity of films by two orders of magnitude and the films showed high optical transmission (>85%) in the visible region.

AB - We report about the fabrication and electrical characterization of heterojunction diodes between poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) doped with dimethyl sulfoxide (DMSO) and p-Si. Electrical characterization of the heterojunction diodes was performed using current-voltage (I-V) measurements. The heterojunction diodes showed good rectifying behavior. Interestingly, for 5 vol.% doping concentration of DMSO, the heterojunction diode showed the best diode characteristics with an ideality factor of 1.9. The doping of DMSO into PEDOT:PSS solution resulted in an increase in the conductivity of films by two orders of magnitude and the films showed high optical transmission (>85%) in the visible region.

KW - DMSO

KW - Electrical properties

KW - Heterojunction

KW - PEDOT:PSS

UR - http://www.scopus.com/inward/record.url?scp=84964371014&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2016.04.029

DO - 10.1016/j.cplett.2016.04.029

M3 - Article

AN - SCOPUS:84964371014

SN - 0009-2614

VL - 652

SP - 162

EP - 166

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Modification of electrical properties of PEDOT:PSS/p-Si heterojunction diodes by doping with dimethyl sulfoxide

Abstract

Keywords

ASJC Scopus subject areas

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