@article{9aead19f57a145e79fd06c64e537e3e2,
title = "Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization",
abstract = "We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30-155 mJ/cm2. The distribution of the volume fraction of a crystalline phase over the surface of processed films is determined for the first time and a correlation is established between changes in this value and the hydrogen content in a-Si:H films upon the crystallization induced by femtosecond laser radiation.",
author = "Emelyanov, {A. V.} and Kazanskii, {A. G.} and Kashkarov, {P. K.} and Konkov, {O. I.} and Kutuzov, {N. P.} and Lyaskovskii, {V. L.} and Forsh, {P. A.} and Khenkin, {M. V.}",
note = "Funding Information: This work was supported in part by the Ministry of Education and Science of the Russian Federation (project no. 8018 of July 16, 2012) and the Russian Foundation for Basic Research (project no. 12 02 33033) and performed using equipment of the Center for Collective Use of the All Russia Research Institute for Optico Physical Measurements, Moscow.",
year = "2014",
month = jan,
day = "1",
doi = "10.1134/S1063785014020217",
language = "English",
volume = "40",
pages = "141--144",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "Pleiades Publishing",
number = "2",
}