Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization

A. V. Emelyanov, A. G. Kazanskii, P. K. Kashkarov, O. I. Konkov, N. P. Kutuzov, V. L. Lyaskovskii, P. A. Forsh, M. V. Khenkin

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30-155 mJ/cm2. The distribution of the volume fraction of a crystalline phase over the surface of processed films is determined for the first time and a correlation is established between changes in this value and the hydrogen content in a-Si:H films upon the crystallization induced by femtosecond laser radiation.

Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalTechnical Physics Letters
Volume40
Issue number2
DOIs
StatePublished - 1 Jan 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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