Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies

M. Dolores Cubells-Beltrán, C. Reig, A. De Marcellis, E. Figueras, A. Yúfera, B. Zadov, E. Paperno, S. Cardoso, P. P. Freitas

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order to evaluate so obtained devices, an extended characterization has been carried out including DC magnetic measurements and noise analysis. Moreover, a 2D-FEM (Finite Element Method) model, including the dependence of the GMR device resistance with the magnetic field, has been also developed and simulated. Its potential use as electric current sensors at the integrated circuit level has also been demonstrated.

Original languageEnglish
Pages (from-to)702-707
Number of pages6
JournalMicroelectronics Journal
Issue number6
StatePublished - 1 Jan 2014


  • CMOS
  • GMR
  • Integrated current sensor
  • Monolithic integration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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